IXTP3N50D2 - THT N channel transistors

IXTP3N50D2
Description

Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 3A
Power dissipation 125W
Case TO220AB
On-state resistance 1.5Ω
Mounting THT
Gate charge 1.07µC
Kind of package tube
Kind of channel depletion
Reverse recovery time 24ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat