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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXTP3N120

IXTP3N120 - THT N channel transistors

IXTP3N120
Description

Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 3A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 4.5Ω
Mounting THT
Gate charge 42nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 700ns
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Development and design: Seventh Cat