IXTP3N100D2 - THT N channel transistors

IXTP3N100D2
Description

Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 3A
Power dissipation 125W
Case TO220AB
On-state resistance 5.5Ω
Mounting THT
Gate charge 1.02µC
Kind of package tube
Kind of channel depletion
Reverse recovery time 17ns
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Development and design: Seventh Cat