IXTP2R4N120P - THT N channel transistors

IXTP2R4N120P
Description

Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Polar™
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 2.4A
Pulsed drain current 6A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 7.5Ω
Mounting THT
Gate charge 37nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 920ns
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Development and design: Seventh Cat