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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / THT P channel transistors / IXTP26P10T

IXTP26P10T - THT P channel transistors

IXTP26P10T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -100V
Drain current -26A
Power dissipation 150W
Case TO220AB
Gate-source voltage ±15V
On-state resistance 90mΩ
Mounting THT
Gate charge 52nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 70ns
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Development and design: Seventh Cat