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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXTP160N10T

IXTP160N10T - THT N channel transistors

IXTP160N10T
Description

Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Trench™
Polarisation unipolar
Drain-source voltage 100V
Drain current 160A
Power dissipation 430W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 7mΩ
Mounting THT
Gate charge 132nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 60ns
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Development and design: Seventh Cat