IXTP110N055T2 - THT N channel transistors

IXTP110N055T2
Description

Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 55V
Drain current 110A
Power dissipation 180W
Case TO220AB
On-state resistance 6.6mΩ
Mounting THT
Gate charge 57nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 38ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat