IXTP10P15T - THT P channel transistors

IXTP10P15T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -150V
Drain current -10A
Power dissipation 83W
Case TO220AB
Gate-source voltage ±15V
On-state resistance 0.35Ω
Mounting THT
Gate charge 36nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 120ns
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Development and design: Seventh Cat