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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / THT P channel transistors / IXTK210P10T

IXTK210P10T - THT P channel transistors

IXTK210P10T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -100V
Drain current -210A
Power dissipation 1.04kW
Case TO264
Gate-source voltage ±15V
On-state resistance 7.5mΩ
Mounting THT
Gate charge 740nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat