IXTK200N10P - THT N channel transistors

IXTK200N10P
Description

Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology PolarHT™
Polarisation unipolar
Drain-source voltage 100V
Drain current 200A
Power dissipation 800W
Case TO264
Gate-source voltage ±20V
On-state resistance 7.5mΩ
Mounting THT
Gate charge 240nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 100ns
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Development and design: Seventh Cat