IXTK170N10P - THT N channel transistors

IXTK170N10P
Description

Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Polar™
Polarisation unipolar
Drain-source voltage 100V
Drain current 170A
Power dissipation 715W
Case TO264
Gate-source voltage ±20V
On-state resistance 9mΩ
Mounting THT
Gate charge 198nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 120ns
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Development and design: Seventh Cat