IXTK120N25P - THT N channel transistors

IXTK120N25P
Description

Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Polar™
Polarisation unipolar
Drain-source voltage 250V
Drain current 120A
Power dissipation 700W
Case TO264
Gate-source voltage ±20V
On-state resistance 24mΩ
Mounting THT
Gate charge 185nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat