IXTH52P10P - THT P channel transistors

IXTH52P10P
Description

Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology PolarP™
Polarisation unipolar
Drain-source voltage -100V
Drain current -52A
Power dissipation 300W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 50mΩ
Mounting THT
Gate charge 60nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 120ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat