IXTH50P10 - THT P channel transistors

IXTH50P10
Description

Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -50A
Power dissipation 300W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 55mΩ
Mounting THT
Gate charge 0.14µC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 180ns
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Development and design: Seventh Cat