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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXTH3N100P

IXTH3N100P - THT N channel transistors

IXTH3N100P
Description

Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 3A
Power dissipation 125W
Case TO247-3
Mounting THT
Gate charge 36nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 820ns
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Development and design: Seventh Cat