IXTH30N60P - THT N channel transistors

IXTH30N60P
Description

Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 30A
Power dissipation 540W
Case TO247-3
On-state resistance 0.24Ω
Mounting THT
Gate charge 82nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 0.5µs
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Development and design: Seventh Cat