IXTH20N65X - THT N channel transistors

IXTH20N65X
Description

Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 20A
Power dissipation 320W
Case TO247-3
On-state resistance 0.21Ω
Mounting THT
Gate charge 35nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices ultra junction x-class
Reverse recovery time 0.35µs
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Development and design: Seventh Cat