IXTH1N450HV - THT N channel transistors

IXTH1N450HV
Description

Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 4.5kV
Drain current 1A
Power dissipation 520W
Case TO247-3
On-state resistance 80Ω
Mounting THT
Gate charge 46nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 1.75µs
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Development and design: Seventh Cat