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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / THT P channel transistors / IXTH120P065T

IXTH120P065T - THT P channel transistors

IXTH120P065T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -65V
Drain current -120A
Power dissipation 298W
Case TO247-3
Gate-source voltage ±15V
On-state resistance 10mΩ
Mounting THT
Gate charge 185nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 53ns
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Development and design: Seventh Cat