IXTH11P50 - THT P channel transistors

IXTH11P50
Description

Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -500V
Drain current -11A
Power dissipation 300W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 0.75Ω
Mounting THT
Gate charge 145nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 0.5µs
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Development and design: Seventh Cat