IXTH110N25T - THT N channel transistors

IXTH110N25T
Description

Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 110A
Power dissipation 694W
Case TO247-3
On-state resistance 26mΩ
Mounting THT
Gate charge 157nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 170ns
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Development and design: Seventh Cat