Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXTH110N10L2

IXTH110N10L2 - THT N channel transistors

IXTH110N10L2
Description

Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 110A
Power dissipation 600W
Case TO247-3
On-state resistance 18mΩ
Mounting THT
Gate charge 260nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices linear power mosfet
Reverse recovery time 230ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat