IXTA52P10P - SMD P channel transistors

IXTA52P10P
Description

Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology PolarP™
Polarisation unipolar
Drain-source voltage -100V
Drain current -52A
Power dissipation 300W
Case TO263
Gate-source voltage ±20V
On-state resistance 50mΩ
Mounting SMD
Gate charge 60nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 120ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat