IXTA3N50P - SMD N channel transistors

IXTA3N50P
Description

Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Polar™
Polarisation unipolar
Drain-source voltage 500V
Drain current 3A
Power dissipation 70W
Case TO263
Gate-source voltage ±30V
On-state resistance
Mounting SMD
Gate charge 9.3nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 400ns
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Development and design: Seventh Cat