IXTA3N150HV - SMD N channel transistors

IXTA3N150HV
Description

Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1.5kV
Drain current 3A
Power dissipation 250W
Case TO263
Mounting SMD
Gate charge 38.6nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 900ns
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Development and design: Seventh Cat