IXTA36N30P - SMD N channel transistors

IXTA36N30P
Description

Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology PolarHT™
Polarisation unipolar
Drain-source voltage 300V
Drain current 36A
Power dissipation 300W
Case TO263
Gate-source voltage ±30V
On-state resistance 0.11Ω
Mounting SMD
Gate charge 70nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 250ns
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Development and design: Seventh Cat