IXTA32P05T - SMD P channel transistors

IXTA32P05T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -50V
Drain current -32A
Power dissipation 83W
Case TO263
Gate-source voltage ±15V
On-state resistance 39mΩ
Mounting SMD
Gate charge 46nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 26ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat