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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IXTA28P065T

IXTA28P065T - SMD P channel transistors

IXTA28P065T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -65V
Drain current -28A
Power dissipation 83W
Case TO263
Gate-source voltage ±15V
On-state resistance 45mΩ
Mounting SMD
Gate charge 46nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 31ns
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Development and design: Seventh Cat