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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IXTA180N10T

IXTA180N10T - SMD N channel transistors

IXTA180N10T
Description

Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 180A
Power dissipation 480W
Case TO263
On-state resistance 6.4mΩ
Mounting SMD
Gate charge 151nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 72ns
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Development and design: Seventh Cat