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Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
| Manufacturer |
IXYS |
| Type of transistor |
P-MOSFET |
| Technology |
TrenchP™ |
| Polarisation |
unipolar |
| Drain-source voltage |
-65V |
| Drain current |
-120A |
| Power dissipation |
298W |
| Case |
TO263 |
| Gate-source voltage |
±15V |
| On-state resistance |
10mΩ |
| Mounting |
SMD |
| Gate charge |
185nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Reverse recovery time |
53ns |