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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXGH50N90B2D1

IXGH50N90B2D1 - THT IGBT transistors

IXGH50N90B2D1
Description

Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
HiPerFAST™
PT
Collector-emitter voltage 900V
Collector current 50A
Power dissipation 400W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 200A
Mounting THT
Gate charge 135nC
Kind of package tube
Turn-on time 48ns
Turn-off time 820ns
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Development and design: Seventh Cat