IXGH16N170 - THT IGBT transistors

IXGH16N170
Description

Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology NPT
Collector-emitter voltage 1.7kV
Collector current 16A
Power dissipation 190W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 80A
Mounting THT
Gate charge 78nC
Kind of package tube
Turn-on time 90ns
Turn-off time 1.6µs
Features of semiconductor devices high voltage
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat