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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXGH10N170A

IXGH10N170A - THT IGBT transistors

IXGH10N170A
Description

Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology NPT
Collector-emitter voltage 1.7kV
Collector current 5A
Power dissipation 140W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 20A
Mounting THT
Gate charge 29nC
Kind of package tube
Turn-on time 107ns
Turn-off time 240ns
Features of semiconductor devices high voltage
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Development and design: Seventh Cat