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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IXGA30N120B3

IXGA30N120B3 - SMD IGBT transistors

IXGA30N120B3
Description

Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
PT
Collector-emitter voltage 1.2kV
Collector current 30A
Power dissipation 300W
Case TO263
Gate-emitter voltage ±20V
Pulsed collector current 150A
Mounting SMD
Gate charge 87nC
Kind of package tube
Turn-on time 56ns
Turn-off time 471ns
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Development and design: Seventh Cat