IXFY4N85X - SMD N channel transistors

IXFY4N85X
Description

Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
X-Class
Polarisation unipolar
Drain-source voltage 850V
Drain current 3.5A
Pulsed drain current 10A
Power dissipation 150W
Case TO252
Gate-source voltage ±30V
On-state resistance 2.5Ω
Mounting SMD
Gate charge 7nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices ultra junction x-class
Reverse recovery time 170ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat