IXFX360N10T - THT N channel transistors

IXFX360N10T
Description

Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 360A
Power dissipation 1.25kW
Case PLUS247™
On-state resistance 2.9mΩ
Mounting THT
Gate charge 525nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
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Development and design: Seventh Cat