IXFX210N30X3 - THT N channel transistors

IXFX210N30X3
Description

Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
X3-Class
Polarisation unipolar
Drain-source voltage 300V
Drain current 210A
Power dissipation 1.25kW
Case PLUS247™
Gate-source voltage ±20V
On-state resistance 5.5mΩ
Mounting THT
Gate charge 375nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 190ns
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Development and design: Seventh Cat