IXFX20N120P - THT N channel transistors

IXFX20N120P
Description

Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 20A
Power dissipation 780W
Case PLUS247™
Gate-source voltage ±30V
On-state resistance 570mΩ
Mounting THT
Gate charge 193nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
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Development and design: Seventh Cat