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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IXFT24N90P

IXFT24N90P - SMD N channel transistors

IXFT24N90P
Description

Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 900V
Drain current 24A
Power dissipation 660W
Case TO268
Gate-source voltage ±30V
On-state resistance 0.42Ω
Mounting SMD
Gate charge 130nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
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Development and design: Seventh Cat