IXFT120N15P - SMD N channel transistors

IXFT120N15P
Description

Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
PolarHT™
Polarisation unipolar
Drain-source voltage 150V
Drain current 120A
Power dissipation 600W
Case TO268
Gate-source voltage ±20V
On-state resistance 16mΩ
Mounting SMD
Gate charge 150nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat