Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXFR18N90P

IXFR18N90P - THT N channel transistors

IXFR18N90P
Description

Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 900V
Drain current 10.5A
Pulsed drain current 36A
Power dissipation 200W
Case ISOPLUS247™
Gate-source voltage ±30V
On-state resistance 0.66Ω
Mounting THT
Gate charge 97nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat