IXFQ60N25X3 - THT N channel transistors

IXFQ60N25X3
Description

Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO3P; 95ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 60A
Power dissipation 320W
Case TO3P
On-state resistance 23mΩ
Mounting THT
Gate charge 50nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices ultra junction x-class
Reverse recovery time 95ns
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Development and design: Seventh Cat