IXFP10N60P - THT N channel transistors

IXFP10N60P
Description

Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 10A
Power dissipation 200W
Case TO220AB
On-state resistance 0.74Ω
Mounting THT
Gate charge 32nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 120ns
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Development and design: Seventh Cat