IXFN420N10T - Transistor modules MOSFET

IXFN420N10T
Description

Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 100V
Drain current 420A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 2.3mΩ
Pulsed drain current 1kA
Power dissipation 1.07kW
Technology GigaMOS™
HiPerFET™
Kind of channel enhancement
Gate charge 670nC
Reverse recovery time 140ns
Gate-source voltage ±30V
Mechanical mounting screw
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Development and design: Seventh Cat