IXFN26N100P - Transistor modules MOSFET

IXFN26N100P
Description

Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 1kV
Drain current 23A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 390mΩ
Pulsed drain current 65A
Power dissipation 595W
Technology HiPerFET™
Polar™
Kind of channel enhancement
Gate charge 197nC
Reverse recovery time 300ns
Gate-source voltage ±40V
Mechanical mounting screw
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Development and design: Seventh Cat