IXFN210N30X3 - Transistor modules MOSFET

IXFN210N30X3
Description

Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 300V
Drain current 210A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 4.6mΩ
Pulsed drain current 650A
Power dissipation 695W
Technology HiPerFET™
X3-Class
Kind of channel enhancement
Gate charge 375nC
Reverse recovery time 190ns
Gate-source voltage ±20V
Mechanical mounting screw
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Development and design: Seventh Cat