IXFN210N20P - Transistor modules MOSFET

IXFN210N20P
Description

Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 200V
Drain current 188A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 10.5mΩ
Pulsed drain current 600A
Power dissipation 1.07kW
Technology HiPerFET™
Polar™
Kind of channel enhancement
Gate charge 255nC
Reverse recovery time 200ns
Gate-source voltage ±30V
Mechanical mounting screw
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Development and design: Seventh Cat