IXFN20N120P - Transistor modules MOSFET

IXFN20N120P
Description

Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 1.2kV
Drain current 20A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 570mΩ
Pulsed drain current 50A
Power dissipation 595W
Technology HiPerFET™
Polar™
Kind of channel enhancement
Gate charge 193nC
Reverse recovery time 300ns
Gate-source voltage ±40V
Mechanical mounting screw
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Development and design: Seventh Cat