IXFN180N25T - Transistor modules MOSFET

IXFN180N25T
Description

Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 250V
Drain current 168A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 12.9mΩ
Pulsed drain current 500A
Power dissipation 900W
Technology GigaMOS™
Kind of channel enhancement
Gate charge 364nC
Reverse recovery time 200ns
Gate-source voltage ±30V
Mechanical mounting screw
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Development and design: Seventh Cat