IXFN100N50P - Транзисторні модулі MOSFET

IXFN100N50P
Description

Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 500V
Drain current 75A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 49mΩ
Pulsed drain current 250A
Power dissipation 1.04kW
Technology HiPerFET™
Kind of channel enhancement
Gate charge 240nC
Reverse recovery time 200ns
Gate-source voltage ±30V
Mechanical mounting screw
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat